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| NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large-scale power-amplifier and driver applications to 300MHz. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector-Base Voltage,VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.3mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Dynamic Characteristics Current Gain - Bandwidth Product Output Capacitance Functional Tests Power Input Common-Emitter Amplifier Power Gain Collector Efficiency Pin Gpe RL = 50, Pout = 12W, f = 175MHz - 4.77 80 - 5.0 - 4.0 - - W dB % fT Cob IC = 100mA, VCE = 13.6V, f = 100MHz VCB = 13.6V, IE = 0, f = 100kHz - - 350 - MHz pF VCEO(sus) IC = 200mA, Note 1 V(BR)CEO IC = 0.25mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 18 36 4 - - - - - - V V V Symbol Test Conditions Min Typ Max Unit 12.5 20.0 Note 1. Pulsed thru a 25mH inductor. Collector .200 (5.08) Dia Emitter/Stud .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) Max .320 (8.22) Max .113 (2.88) 10-32 NF-2A .078 (1.97) Max .455 (11.58) Max |
Price & Availability of NTE475
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